![]() ![]() chip-to-package, die-attach, "first-level" interconnects Manufacturing methods related thereto H01L2224/01- Means for bonding being attached to, or being formed on, the surface to be connected, e.g.H01L2224/00- Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00.H01L24/13- Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector. ![]() H01L24/12- Structure, shape, material or disposition of the bump connectors prior to the connecting process.H01L24/10- Bump connectors Manufacturing methods related thereto.H01L24/01- Means for bonding being attached to, or being formed on, the surface to be connected, e.g.H01L24/00- Arrangements for connecting or disconnecting semiconductor or solid-state bodies Methods or apparatus related thereto.H01L- SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10.Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Application filed by Shanghai Jiaotong University filed Critical Shanghai Jiaotong University Priority to CN201710352929.4A priority Critical patent/CN107195605A/en Publication of CN107195605A publication Critical patent/CN107195605A/en Status Pending legal-status Critical Current Links Original Assignee Shanghai Jiaotong University Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Inventor 凌惠琴 王冬凡 胡安民 李明 Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Pending Application number CN201710352929.4A Other languages Chinese ( zh) Google Patents Cuprum-nickel-stannum micro bump using thin nickel dam as barrier layer and preparation method thereofĭownload PDF Info Publication number CN107195605A CN107195605A CN201710352929.4A CN201710352929A CN107195605A CN 107195605 A CN107195605 A CN 107195605A CN 201710352929 A CN201710352929 A CN 201710352929A CN 107195605 A CN107195605 A CN 107195605A Authority CN China Prior art keywords nickel layer thin cuprum stannum Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents CN107195605A - Cuprum-nickel-stannum micro bump using thin nickel dam as barrier layer and preparation method thereof CN107195605A - Cuprum-nickel-stannum micro bump using thin nickel dam as barrier layer and preparation method thereof ![]()
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